2SJ352 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SJ352

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ351, 2SJ352

Outline

TO-3P

D

G

1

2

3

1. Gate

2. Source

(Flange)

S

3. Drain

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

2SJ351

2SJ352

Gate to source voltage

Drain current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Note: 1. Value at TC = 25°C

Symbol

VDSX

VGSS

ID

I DR

Pch*1

Tch

Tstg

Ratings

Unit

–180

V

–200

±20

V

–8

A

–8

A

100

W

150

°C

–55 to +150

°C

2

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