2SJ450
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
10
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
Typical Capacitance vs.
Drain to Source Voltage
500
200
Ciss
100
50
Coss
20
Crss
10 VGS = 0
5 f = 1 MHz
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
V DD = –10 V
–25 V
–20
–50 V
–4
–40 VDS
VGS
–60
V DD = –50 V
–25 V
–10 V
–80
–100 I D = –2 A
0
2
4
Gate Charge
6
8
Qg (nc)
–8
–12
–16
–20
10
Switching Characteristics
200
100
t d(off)
50
tf
20
tr
10
5
2
–0.1 –0.2
t d(on)
VGS = –10 V, V DD = –30 V
duty < 1 %
–0.5 –1 –2 –5 –10
Drain Current I D (A)
6