2SJ319L-E データシートの表示（PDF） - Renesas Electronics
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2SJ319L-E Datasheet PDF : 8 Pages
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2SJ319(L), 2SJ319(S)
Main Characteristics
Power vs. Temperature Derating
20
15
10
05
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–5
–10 V
Pulse Test
–4
–8 V
–6 V
–3
–5 V
–2
–1
–4 V
VGS = –3.5 V
0
0
–4 –8 –12 –16 –20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
Pulse Test
–16
–12
ID = –5 A
–8
–4
–2 A
–1 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
–50
–30
–10
–3
–1
–0.3
–0.1
OtlihmpisietearadretibaoynDisRCinODpSPeW(raot=nio)1n0(Tmc1s=1(m1020s5s°1hµCo0s)t)µs
Ta = 25°C
–0.05
–1 –3 –10 –30 –100 –300 –500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–5
Tc = –25°C
–4
25°C
–3
75°C
–2
–1
VDS = –10 V
Pulse Test
0
0
–2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
VGS = –10 V
5 Pulse Test
2
1
0.5
0.2
0.1
–0.2
–0.5 –1 –2
–5 –10
Drain Current ID (A)
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