2SJ387S データシートの表示（PDF） - Renesas Electronics
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2SJ387S Datasheet PDF : 8 Pages
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2SJ387(L), 2SJ387(S)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
0.08
VGS = –2.5 V
ID = –5 A
–1 A, –2 A
0.04
–4 V
–5 A
–2 A
–1 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
10
–0.1 –0.3 –1 –3 –10 –30 –100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –5 V
–10 V
–10
–15 V
–4
–20 VDS
VDD = –5 V
–10 V
–8
–15 V
–30
VGS
–12
–40
–50
0
–16
ID = –10 A
–20
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
50
VDS = –10 V
Pulse Test
20
10
Tc = –25°C
5
25°C
75°C
2
1
0.5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current ID (A)
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
Ciss
Coss
200
100
0
Crss
–10 –20
VGS = 0
f = 1 MHz
–30 –40 –50
Drain to Source Voltage VDS (V)
1000
500
Switching Characteristics
td(off)
tf
200
tr
100
50
20
10
–0.1 –0.3
VGS = –4 V, VDD = –10 V
PW = 5 µs, duty ≤ 1 %
td(on)
–1 –3 –10 –30 –100
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
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