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2SJ451ZK-TR-E データシートの表示(PDF) - Renesas Electronics

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コンポーネント説明
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2SJ451ZK-TR-E
Renesas
Renesas Electronics Renesas
2SJ451ZK-TR-E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ451
Main Characteristics
Maximum Channel Dissipation Curve
200
150
100
50
0
0
50
100
150
200
Ambient Temperature Ta (°C)
–0.20
–0.16
Typical Output Characteristics
–10 V
–4 V
–2.5 V
Pulse Test
–0.12
–0.08
VGS = –2 V
–0.04
0
0
–2
–4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
–0.4
ID = –0.2 A
–0.2
–0.1 A
0
–0.05 A
0
–2
–4
–6
–8 –10
Gate to Source Voltage VGS (V)
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 3 of 6
Maximum Safe Operation Area
–1
1 ms
–0.3
–0.1
–0.03
–0.01
Operation in
this area is
limited by RDS (on)
–0.003
Ta = 25°C
–0.001
–0.1 –0.3 –1 –3
–10 –30 –100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–0.20
–0.16
VDS = –10 V
Pulse Test
–0.12
–0.08
Tc = 75°C
–0.04
25°C
–25°C
0
0 –1
–2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
VGS = –2.5 V
5
2
–4 V
1
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1
Drain Current ID (A)

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