2SJ598 データシートの表示（PDF） - NEC => Renesas Technology

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2SJ598

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3)

6.5 ±0.2

5.0 ±0.2

4

123

1.1 ±0.2

2.3 ±0.2

0.5 ±0.1

2.3 2.3

0.5

+0.2

−0.1

0.5

+0.2

−0.1

1. Gate

2. Drain

3. Source

4. Fin (Drain)

2SJ598

2) TO-252 (MP-3Z)

6.5 ±0.2

5.0 ±0.2

4

2.3 ±0.2

0.5 ±0.1

123

1.1 ±0.2

2.3 2.3

0.9 0.8

MAX. MAX.

0.8

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Data Sheet D14656EJ4V0DS

7

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