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2SJ599-Z データシートの表示(PDF) - NEC => Renesas Technology
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2SJ599-Z
SWITCHING P-CHANNEL POWER MOS FET
NEC => Renesas Technology
2SJ599-Z Datasheet PDF : 9 Pages
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SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
I
AS
= –20 A
10
E
AS
= 40 mJ
1
V
DD
= –30 V
R
G
= 25
Ω
0.1
V
GS
= –20
→
0 V
10
µ
100
µ
1m
L - Inductive Load - H
10 m
2SJ599
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
V
DD
= –30 V
140
R
G
= 25
Ω
V
GS
= –20
→
0 V
120
I
AS
≤
–20 A
100
80
60
40
20
0
25 50 75 100 125 150
Starting T
ch
- Starting Channel Temperature -
˚C
6
Data Sheet D14644EJ3V0DS
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