Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = −100 V, VGS = 0 V
V (BR) DSS ID = −10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −0.5 A
VGS = −10 V, ID = −0.5 A
VDS = −10 V, ID = −0.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
toff
Total gate charge (Gate−source
plus gate−drain)
Qg
VDD ≈ −80 V, VGS = −10 V,
Gate−source charge
Qgs
ID = −1 A
Gate−drain (“miller”) charge
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = −1 A, VGS = 0 V
IDR = −1 A, VGS = 0 V
dIDR / dt = 50 A / µs
Marking
2SJ509
Min Typ. Max Unit
—
—
±10
µA
—
— −100 µA
−100 —
—
V
−0.8
— −2.0
V
— 1.68 2.5
Ω
— 1.34 1.9
0.3
0.7
—
S
—
135
—
—
22
—
pF
—
48
—
—
20
—
—
32
—
ns
—
25
—
—
130
—
—
6.3
—
—
4.1
—
nC
—
2.2
—
Min Typ. Max Unit
—
—
−1
A
—
—
−3
A
—
—
1.5
V
—
90
—
ns
—
180
—
nC
2
2002-01-25