2SJ567(2002) データシートの表示（PDF） - Toshiba
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2SJ567 Datasheet PDF : 6 Pages
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2SJ567
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC-DC Converter and
Motor Drive Applications
Industrial Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)
· High forward transfer admittance: |Yfs| = 2.0 S (typ.)
· Low leakage current: IDSS = −100 µA (max) (VDS = −200 V)
· Enhancement-model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
Unit
-200
V
-200
V
±20
V
-2.5
A
-10
20
W
97.5
mJ
-2.5
A
2.0
mJ
150
°C
-55~150
°C
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
6.25
°C/W
125
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = -50 V, Tch = 25°C (initial), L = -25.2 mH, IAR = -2.5 A
RG = 25 W,
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
2002-08-12
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