Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
2SJ567 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SJ567
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
Toshiba
2SJ567 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
6
Common source
VGS
= −
10 V
5
Pulse test
ID
= −
1.5 A
−
1.2
4
3
−
1.0
2
1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
−
10
Common source
Tc
=
25°C
Pulse test
I
DR
– V
DS
−
1
2SJ567
−
0.1
0
−
5
−
3
0.2
0.4
−
1
VGS
=
0 V
0.6
0.8
1
Drain-source voltage V
DS
(V)
Capacitance – V
DS
1000
Ciss
100
Coss
10
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
−
0.1
−
1
Crss
−
10
−
100
Drain-source voltage V
DS
(V)
V
th
– Tc
-5
Common source
-4
VDS
=
10 V
ID
=
1 mA
Pulse test
-3
-2
-1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
– Tc
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input/output characteristics
VDS
−
160
−
120
−
80
−
40
VDS
= −
40 V
−
160
−
80
VGS
−
16
−
12
Common source
ID
= −
2.5 A
Tc
=
25°C
Pulse test
−
8
−
4
0
0
4
8
12
16
20
Total gate charge Q
g
(nC)
4
2010-02-05
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]