2SJ577 データシートの表示（PDF） - SANYO -> Panasonic

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2SJ577

P-Channel Silicon MOSFET

SANYO -> Panasonic 

2SJ577

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Symbol

VDSS

VGSS

ID

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Conditions

PW≤10µs, duty cycle≤1%

Tc=25˚ C

Electrical Characteristics at Ta = 25˚C

Parameter

Drain-to-Source Breakdown Voltage

Gate-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source ON-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage

Symbol

Conditions

V(BR)DSS

V(BR)GSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

ID=–1mA, VGS=0

IG=±100µA, VDS=0

VDS=–250V, VGS=0

VGS=±25V, VDS=0

VDS=–10V, ID=–1mA

VDS=–10V, ID=–1.5A

ID=–1.5A, VGS=–10V

VDS=–20V, f=1MHz

VDS=–20V, f=1MHz

VDS=–20V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

IS=–3A, VGS=0

Switching Time Test Circuit

0V VIN

--10V

VIN

PW=10µs

D.C.≤1%

G

VDD=--100V

ID=--1.5A

RL=66.7Ω

D

VOUT

P.G

50Ω

2SJ577

S

Ratings

Unit

–250 V

±30 V

–3 A

–12 A

1.65 W

50 W

150 ˚C

–55 to +150 ˚C

Ratings

Unit

min

typ max

–250

V

±30

V

–100 µA

±10 µA

–1.5

–2.5 V

1.5

2.5

S

1.5

2.0 Ω

600

pF

110

pF

50

pF

14

ns

18

ns

75

ns

65

ns

–1.0 –1.5 V

No.6411–2/4

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