2SJ555 データシートの表示（PDF） - Hitachi -> Renesas Electronics

部品番号

コンポーネント説明

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2SJ555

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Main Characteristics

2SJ555

Power vs. Temperature Derating

200

150

100

50

0

50

100

150

200

Case Temperature Tc (°C)

–1000

–300

–100

–30

–10

–3

–1

Maximum Safe Operation Area

10 µs

OtlihmpisietearadretiboaynisRinDDSC(OoPpnWe)r=at1io0nm(Tsc1(1=1m02s0sh5oµ°tCs) )

–0.3

–0.1 Ta = 25 °C

–0.1 –0.3 –1

–3 –10 –30 –100

Drain to Source Voltage V DS (V)

–10 V Typical Output Characteristics

–100

–4.5 V

–5 V

Pulse Test

–80

–8 V

–4 V

–60

–3.5 V

–40

–3 V

–20

VGS = –2.5 V

0

–4 –8 –12 –16 –20

Drain to Source Voltage V DS (V)

–100

–80

Typical Transfer Characteristics

V DS = –10 V

Pulse Test

25 °C

–60

–40

–20

75 °C

Tc = –25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

3

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