2SJ669 データシートの表示（PDF） - Toshiba
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2SJ669 Datasheet PDF : 6 Pages
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2SJ669
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOS III)
2SJ669
Relay Drive, DC/DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
ID
Drain current
IDP
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
−60
V
−60
V
±20
V
−5
A
−20
A
1.2
W
40.5
mJ
−5
A
0.12
mJ
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (ch−a)
104
°C / W
Note 1: The channel temperature should not exceed 150℃ during use.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29
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