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2SJ669 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SJ669
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOS III)
Toshiba
2SJ669 Datasheet PDF : 6 Pages
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2SJ669
r
th
−
t
w
10
1
Duty
=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
100
μ
1m
10 m
100 m
1
Pulse width t
w
(s)
PDM
t
T
Duty
=
t/T
Rth
(ch-a)
=
104°C/W
10
100
Safe operating area
100
ID max (Pulsed)
*
10
ID max (Continuous)
100
μ
s
*
1 ms
*
1
DC operation
Ta
=
25°C
0.1
*:Single nonrepetitive pulse
0.01
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.01
0.1
1
VDSS max
10
100
Drain
−
source voltage V
DS
(V)
E
AS
– T
ch
50
40
30
20
10
0
25
50
75
100
125
150
Channel temperature (initia) Tch (°C)
0V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
= −
25 V, L
=
2.2 mH
Waveform
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2009-09-29
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