DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SJ669 データシートの表示(PDF) - Toshiba

部品番号
コンポーネント説明
メーカー
2SJ669 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SJ669
rth tw
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
100 μ
1m
10 m
100 m
1
Pulse width tw (s)
PDM
t
T
Duty = t/T
Rth (ch-a) = 104°C/W
10
100
Safe operating area
100
ID max (Pulsed) *
10
ID max (Continuous)
100 μs *
1 ms *
1
DC operation
Ta = 25°C
0.1
*:Single nonrepetitive pulse
0.01
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.01
0.1
1
VDSS max
10
100
Drainsource voltage VDS (V)
EAS – Tch
50
40
30
20
10
0
25
50
75
100
125
150
Channel temperature (initia) Tch (°C)
0V
15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = −25 V, L = 2.2 mH
Waveform
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5
2009-09-29

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]