2SK123 データシートの表示（PDF） - Panasonic Corporation
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2SK123 Datasheet PDF : 3 Pages
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Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
s Features
q High mutual conductance gm
q Low noise voltage of NV
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDSO
VDGO
IDSO
IDGO
IGSO
PD
Topr
Tstg
20
V
20
V
2
mA
2
mA
2
mA
200
mW
−20 to +80
°C
−55 to +150
°C
0.40+–00..0150
3
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Unit: mm
0.16+–00..0160
1: Drain
2: Source
3: Gate
Mini3-G1 Package
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Current consumption
ID
VD = 4.5 V, CO = 10 pF, RD = 2.2 kΩ ± 1% 100
600
µA
Drain to Source cut-off current IDSS
VDS = 4.5 V, VGS = 0
95
480
µA
Mutual conductance
gm
VD = 4.5 V, VGS = 0, f = 1 kHz
0.7
1.6
mS
Noise figure
VD = 4.5V, RD = 2.2 kΩ ± 1%
NV
CO = 10 pF, A-curve
4
µV
GV1
−3
2
dB
Voltage gain
Voltage gain difference
VD = 4.5 V, RD = 2.2 kΩ ± 1%
GV2
CO = 10 pF, eG = 10 mV, f = 1 kHz
0
3.3
dB
GV3
VD = 12 V, RD = 2.2 kΩ ± 1%
−4.5
CO = 10 pF, eG = 10 mV, f = 1 kHz
− 0.3
dB
∆|GV2 − GV1| VD = 1.5 V, RD = 2.2 kΩ ± 1%
0
+3.5
dB
∆|GV1 − GV3| CO = 10 pF, eG = 10 mV, f = 1 kHz
0
+3.5
dB
Publication date: January 2002
Note) The part number in the parenthesis shows conventional part number.
SJF00005BED
1
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