2SJ518AZTL-E データシートの表示（PDF） - Renesas Electronics
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2SJ518AZTL-E Datasheet PDF : 7 Pages
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2SJ518
Main Characteristics
Power vs. Temperature Derating
2.0
Test Condition:
When using the aluminum ceramic
board (12.5 × 20 × 70 mm)
1.5
1.0
0.5
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–5
–10 V –6 V
–5 V
–4
Pulse Test
–4 V
–3
–3.5 V
–2
–3 V
–1
VGS = –2.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Pulse Test
–4
–3
–2
–1
–0.5 A
ID = –2 A
–1 A
0
0
–4 –8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
–100
–30
–10
100 µs
–3
–1
–0.3
–0.1
Operation in
this area is
DC OpPerWa(t1i=ons1h10otmm) ss
–0.03
limited by RDS (on)
Ta = 25°C
–0.01
–0.1 –0.3 –1 –3 –10 –30
–100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–5
VDS = –10 V
Pulse Test
–4
–3
–2
–1
Tc = 75°C
25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
2
1
0.5
VGS = –4 V
–10 V
0.2
0.1
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current ID (A)
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