2SJ553 データシートの表示（PDF） - Renesas Electronics
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2SJ553 Datasheet PDF : 9 Pages
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2SJ553(L), 2SJ553(S)
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–50
–10 V
Pulse Test
–8 V
–3.5 V
–40
–5 V
–4 V
–30
–3 V
–20
–10
–2.5 V
VGS = –2 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Pulse Test
–4
–3
–2
ID = –50 A
–1
–20 A
–10 A
0
0
–4 –8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 8
Maximum Safe Operation Area
–1000
–300
10 µs
–100
–30
–10
–3
–1
DC
Operation in
this area is
OPpWera=tio1n0 (mTcs1=(11m02s0s5h°oµCts))
–0.3
limited by RDS (on)
Ta = 25°C
–0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–50
VDS = –10 V
Pulse Test
–40
–30
–20
–10
Tc = 75°C
25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = –4 V
0.02
–10 V
0.01
–1
–3 –10 –30 –100 –300 –1000
Drain Current ID (A)
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