2SK1266 データシートの表示（PDF） - Panasonic Corporation

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2SK1266

Silicon N-channel Power F-MOS FET

Panasonic Corporation 

Power F-MOS FETs

2SK1266

Silicon N-Channel Power F-MOS

s Features

q Low ON-resistance RDS(on) : RDS(on)1= 0.08Ω(typ)

q High-speed switching : tf=180ns(typ)

q No secondary breakdown

q Low-voltage drive

s Applications

q DC-DC converter

q Non-contact relay

q Solenoid drive

q Motor drive

s Absolute Maximum Ratings (Tc = 25˚C)

Parameter

Symbol

Rating

Unit

Drain-Source breakdown voltage

VDSS

150

V

Gate-Source voltage

VGSS

±20

V

DC

Drain current

ID

±20

A

Pulse

IDP

±40

A

Allowable power

dissipation

TC =25˚C

Ta =25˚C

PD

45

W

2

Channel temperature

Storage temperature

Tch

150

˚C

Tstg

–55 to +150

˚C

s Electrical Characteristics (Tc = 25˚C)

Parameter

Drain-Source cut-off current

Gate-Source leakage current

Drain-Source breakdown voltage

Gate threshold voltage

Drain-Source ON-resistance

Forward transadmittance

Input capacitance

Output capacitance

Feedback capacitance

Turn-on time

Fall time

Turn-off time (delay time)

Symbol

IDSS

IGSS

VDSS

Vth

RDS(on) 1

RDS(on) 2

|Yfs |

Ciss

Coss

Crss

ton

tf

td(off)

Condition

VDS=130V, VGS= 0

VGS=±20V, VDS= 0

ID=1mA, VGS= 0

VDS= 10V, ID=1mA

VGS=10V, ID=10A

VGS= 4V, ID=10A

VDS=10V, ID=10A

VDS=10V, VGS= 0, f=1MHz

VGS=10V, ID=10A

VDD .=.100V, RL=10Ω

2SK1266

10.0±0.2

5.5±0.2

Unit : mm

4.2±0.2

2.7±0.2

ø3.1±0.1

1.3±0.2

1.4±0.1

0.8±0.1

0.5 +0.2

-0.1

2.54±0.25

5.08±0.5

123

1 : Gate

2 : Drain

3 : Source

TO-220 Full Pack Package (a)

Min

Typ

Max

Unit

10

µA

±1

µA

150

V

1

2.5

V

0.08

0.12

Ω

0.09 0.135

Ω

10

20

S

3450

pF

600

pF

150

pF

90

ns

180

ns

770

ns

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