2SK1875-V データシートの表示（PDF） - Toshiba
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2SK1875-V Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK1875
2SK1875
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications
Unit: mm
• High |Yfs|: |Yfs| = 25 mS (typ.)
• Low Ciss: Ciss = 7.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
−20
V
10
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
IGSS
V (BR) GDS
VGS = −15 V, VDS = 0 V
VDS = 0 V, IG = −100 μA
IDSS
VDS = 5 V, VGS = 0 V
(Note)
VGS (OFF)
⎪Yfs⎪
Ciss
Crss
VDS = 5 V, ID = 1 μA
VDS = 5 V, VGS = 0 V, f = 1 kHz
VDS = 5 V, VGS = 0 V, f = 1 MHz
VDG = 5 V, ID = 0 A, f = 1 MHz
Note: IDSS classification
GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
(G)
(L)
(V)
( ) ...... IDSS rank marking
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−20 ⎯
⎯
V
6
⎯
32
mA
⎯
⎯
−2.5
V
15
25
⎯
mS
⎯
7.5
10
pF
⎯
2
3
pF
1
2007-11-01
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