2SK1697 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SK1697

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1697

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS 60

Gate to source breakdown

voltage

V(BR)GSS ±20

Gate to source leak current

I GSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off) 1.0

Static drain to source on state RDS(on) —

resistance

—

Forward transfer admittance |yfs|

Input capacitance

Ciss

0.25

—

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse test

Typ

—

—

—

—

—

1.3

1.8

0.38

30

13

4

3

8

18

14

1

45

Max

—

—

±10

50

2.0

1.7

2.5

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 50 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 0.3 A, VGS = 10 V *1

ID = 0.3 A, VGS = 4 V *1

ID = 0.3 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 0.3 A, VGS = 10 V,

RL = 100 Ω

IF = 0.5 A, VGS = 0

IF = 0.5 A, VGS = 0,

diF/dt = 50 A/µs

See characteristic curve of 2SK1336.

3

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