2SK1971-E データシートの表示（PDF） - Renesas Electronics
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2SK1971-E Datasheet PDF : 7 Pages
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2SK1971
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
0.8
VGS = 10 V
0.6
ID = 50 A
20 A
0.4
0.2
10 A
0
–40 0 40 80 120 160
Case Temperature TC (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
di/dt = 100 A/ µs, VGS = 0
20 Ta = 25°C
10
0.5 1 2
5 10 20 50
Reverse Drain Current IDR (A)
1000
800
600
400
Dynamic Input Characteristics
20
VGS
VDD = 400 V
250 V
16
100 V
12
VDS
ID = 35 A
8
200
VDD = 400 V
4
250 V
100 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
–25°C
20
Tc = 25°C
10
75°C
5
2
VDS= 20 V
Pulse Test
1
0.5
1
2
5 10 20 50 100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
100
VGS = 0
f = 1 MHz
10
Crss
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1000
500
Switching Characteristics
td(off)
200
tr
tf
100
50
td(on)
20 VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
10
0.5 1 2
5 10 20 50
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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