K2355 データシートの表示（PDF） - NEC => Renesas Technology

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K2355

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z

SINGLE AVALANCHE ENERGY vs

STARTING CHANNEL TEMPERATURE

20

ID(peak) = IAS

RG = 25 Ω

VGS = 20 V → 0 V

VDD = 150 V

15

EAS = 17.4 mJ

10

5

0

25 50 75 100 125 150 175

Starting Tch - Starting Channel Temperature - °C

SINGLE AVALANCHE CURRENT vs

INDUCTIVE LOAD

100

RG = 25 Ω

VDD = 150 V

VGS = 20 V → 0

Starting Tch = 25°C

10

IAS = 5.0 A

1.0

EAS = 17.4 mJ

0.1

100 µ

1.0 m

10 m

L - Inductive Load - H

100 m

6

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