2SK2359/2SK2360
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2.0
ID = 6 A
1.5
3A
1.0
0.5
0
–50
0
VGS = 10 V
50
100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
1 000
Coss
100
Crss
10
1
10
100
1 000
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
10 V
VGS = 0
1.0
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
tr
100
10
1.0
0.1
tf
td (on)
td (off)
VDS = 100 V
VGS = 10 V
RG = 25 Ω
1.0
10
100
ID - Drain Current - A
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
10
0.1
1.0
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400
16
ID = 6 A
14
VDD = 400 V VGS
300
250 V
12
125 V
10
200
8
6
100
4
VDS
2
0
10
20
30
40
Qg - Gate Charge - nC
5