SI2302DS データシートの表示（PDF） - Philips Electronics

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SI2302DS

N-channel enhancement mode field-effect transistor

Philips Electronics 

Philips Semiconductors

SI2302DS

N-channel enhancement mode field-effect transistor

8. Characteristics

Table 5: Characteristics

Tj = 25 °C unless otherwise specified

Symbol Parameter

Conditions

Static characteristics

V(BR)DSS drain-source breakdown voltage

VGS(th) gate-source threshold voltage

IDSS

drain-source leakage current

IGSS

RDSon

gate-source leakage current

drain-source on-state resistance

Dynamic characteristics

ID = 10 µA; VGS = 0 V

ID = 1 mA; VDS = VGS; Figure 9

VDS = 20 V; VGS = 0 V

Tj = 25 °C

Tj = 55 °C

VGS = ±8 V; VDS = 0 V

VGS = 4.5 V; ID = 3.6 A; Figure 7 and 8

VGS = 2.5 V; ID = 3.1 A; Figure 7 and 8

gfs

forward transconductance

Qg(tot) total gate charge

Qgs

gate-source charge

Qgd

gate-drain (Miller) charge

Ciss

input capacitance

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

turn-on delay time

tr

rise time

td(off)

turn-off delay time

tf

fall time

Source-drain diode

VDS = 5 V; ID = 3.6 A

VDD = 10 V; VGS = 4.5 V; ID = 3.6 A; Figure 13

VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11

VDD = 10 V; RL = 5.5 Ω; VGS = 4.5 V; RG = 6 Ω

VSD

source-drain (diode forward) voltage IS = 1.6 A; VGS = 0 V; Figure 12

Min Typ Max Unit

20 − − V

0.65 − − V

− 0.01 1.0 µA

− − 10 µA

− 10 100 nA

− 56 85 mΩ

− 77 115 mΩ

−8−S

− 5.4 10 nC

− 0.65 − nC

− 1.6 − nC

− 230 − pF

− 125 − pF

− 80 − pF

− 12 20 ns

− 23 35 ns

− 50 100 ns

− 34 50 ns

− 0.8 1.2 V

9397 750 09107

Product data

Rev. 02 — 20 November 2001

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

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