BFG197 データシートの表示（PDF） - Philips Electronics

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BFG197

NPN 7 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 7 GHz wideband transistor

FEATURES

• High power gain

• Low noise figure

• Gold metallization ensures

excellent reliability.

DESCRIPTION

The BFG197 is a silicon NPN

transistor in a 4-pin, dual-emitter

plastic SOT143 envelope. It is

primarily intended for wideband

applications in the GHz range, such

as satellite TV systems and repeater

amplifiers in fibre-optic systems.

PINNING

PIN

DESCRIPTION

BFG197 (Fig.1) Code: V5

1 collector

2 base

3 emitter

4 emitter

BFG197/X (Fig.1) Code: V13

1 collector

2 emitter

3 base

4 emitter

BFG197A/XR (Fig.2) Code: V35

1 collector

2 emitter

3 base

4 emitter

Product specification

BFG197; BFG197/X;

BFG197/XR

handbook, 2 c4olumns

3

1

Top view

2

MSB014

Fig.1 SOT143.

handbook, 2 co3lumns

4

2

Top view

1

MSB035

Fig.2 SOT143XR.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

IC

Ptot

Cre

fT

GUM

F

collector-base voltage

collector-emitter voltage

collector current

total power dissipation

feedback capacitance

transition frequency

maximum unilateral

power gain

noise figure

open emitter

open base

DC value

up to Ts = 75 °C; note 1

IC = ic = 0; VCB = 8 V; f = 1 MHz

IC = 50 mA; VCE = 4 V; f = 2 GHz

IC = 50 mA; VCE = 6 V;

Tamb = 25 °C; f = 1 GHz

IC = 50 mA; VCE = 6 V;

Tamb = 25 °C; f = 2 GHz

Γs = Γopt; IC = 15 mA; VCE = 8 V;

Tamb = 25 °C; f = 1 GHz

Note

1. TS is the temperature at the soldering point of the collector tab.

MIN.

−

−

−

−

−

−

−

TYP.

−

−

−

−

0.85

7.5

16

MAX.

20

10

100

350

−

−

−

UNIT

V

V

mA

mW

pF

GHz

dB

−

10

−

dB

−

1.7

−

dB

1995 Sep 13

2

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