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2SK2730 データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
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2SK2730
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2730 Datasheet PDF : 10 Pages
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2SK2730
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V
DSS
V
GSS
I
D
I *
1
D(pulse)
I
DR
I
AP
*
3
E
AR
*
3
Pch*
2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Ω
Ratings
Unit
500
V
±
30
V
25
A
100
A
25
A
25
A
35
mJ
175
W
150
°
C
–55 to +150
°
C
2
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