2SK2595 データシートの表示（PDF） - Renesas Electronics

部品番号

コンポーネント説明

メーカー

2SK2595

Silicon N-Channel MOS FET UHF Power Amplifier

Renesas Electronics 

2SK2595

S11 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5

–10

–.2

–.4

–.6

–.8 –1

–5

–4

–3

–2

–1.5

Test condition: VDS = 12 V, ZO = 50 Ω

50 to 2550 MHz (50 MHz step)

(ID = 500 mA)

S21 Parameter vs. Frequency

90°

Scale: 10 / div.

135°

45°

180°

0°

–135°

–45°

–90°

Test condition: VDS = 12 V, ZO = 50 Ω

50 to 2550 MHz (50 MHz step)

(ID = 500 mA)

S12 Parameter vs. Frequency

90°

Scale: 0.02 / div.

135°

45°

180°

0°

–135°

–45°

–90°

Test condition: VDS = 12 V, ZO = 50 Ω

50 to 2550 MHz (50 MHz step)

(ID = 500 mA)

S22 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5

–10

–.2

–.4

–.6

–.8 –1

–5

–4

–3

–2

–1.5

Test condition: VDS = 12 V, ZO = 50 Ω

50 to 2550 MHz (50 MHz step)

(ID = 500 mA)

Rev.4.00, Feb.14.2005, page 4 of 13

Share Link: