GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
VDS = 10 V
ID = 1 mA
1.5
1.0
0.5
0 –50
0
50
100
150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
100
V DS= 10 V
TA = –25 °C
Pulsed
25 °C
75 °C
125 °C
10
2SK2941
DRAIN TO SOURCE ON - STATE RESISTANCE
vs. DRAIN CURRENT
30
VGS = 4 V
20
VGS = 10 V
10
0
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
Pulsed
100 ID = 7 A
18 A
35 A
50
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
VDS = 10 V
Pulsed
TA = –25 °C
25 °C
100
75 °C
125 °C
10
0
10 000
1000
100
5
10
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f =1 MHz
Ciss
Coss
Crss
0
5
10
VGS - Gate to Source Voltage - V
10
0.1
1
10
VDS - Drain to Source Voltage - V
4