2SK2874 データシートの表示（PDF） - Fuji Electric
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2SK2874 Datasheet PDF : 3 Pages
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N-channel MOS-FET
500V 1,5Ω ±6A 50W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2874-01L,S
FAP-IIS Series
Drain-Source-On-State Resistance vs. Tch
RDS(on) = f(Tch): ID=3A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
1
↑
2
↑
3
→ VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test;TC=25°C
→ Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
→ VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑
4
↑
5
↑
6
→ ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
↑
7
→ ID [A]
Typical Gate Charge Characteristic
VGS=f(Qg): ID=6A; Tc=25°C
→ Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
↑
8
↑↑
9
→ VDS [V]
Avalanche Energy Derating
Eas=f(starting Tch): Vcc=50V; IAV=6A
↑
10
↑
→ Qg [nC]
Safe operation area
ID=f(VDS): D=0,01, Tc=25°C
↑
12
→ VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
→ Starting Tch [°C]
→ VDS [V]
This specification is subject to change without notice!
t [s] →
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