Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
2SK3070 データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SK3070
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK3070 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
Datasheet Title
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
10
0.1 0.3
V
GS
= 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I
DR
(A)
30000
10000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
3000
1000
300
Coss
Crss
100
0
10
20 30 40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
20
I
D
= 75 A
80
V
GS
16
60
V
DS
40
V
DD
= 40 V
25 V
12
10 V
8
20
V
DD
= 40 V
4
25 V
10 V
0
0
80 160 240 320 400
Gate Charge Qg (nc)
1000
500
200
100
50
Switching Characteristics
t
d(off)
tf
tr
t
d(on)
20
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1%
10
0.1 0.2 0.5 1
2 5 10 20 50 100
Drain Current I
D
(A)
6
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]