K3177 データシートの表示（PDF） - Renesas Electronics

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K3177

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK3177

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS =90mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

REJ03G1089-0300

(Previous: ADE-208-745A)

Rev.3.00

Sep 07, 2005

RENESAS Package code: PRSS0003AD-A

(Package name: TO-220FM)

D

G

1. Gate

2. Drain

3. Source

12 3

S

Rev.3.00 Sep 07, 2005 page 1 of 7

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