HMMC-5040 データシートの表示（PDF） - HP => Agilent Technologies
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HMMC-5040 Datasheet PDF : 6 Pages
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HMMC-5040 DC Specifications/Physical Properties[1]
Symbol
VD1, 2-3-4
ID1
ID2-3-4
VG1, 2, 3-4
Vp
θch-bs
Tch
Parameters and Test Conditions
Drain Supply Operating Voltages
First Stage Drain Supply Current
(VDD = 4.5 V, VG1 = -0.6 V)
Total Drain Supply Current for Stages 2, 3, and 4
(VDD = 4.5 V, VGG = -0.6 V)
Gate Supply Operating Voltages (IDD = 300 mA)
Pinch-off Voltage (VDD = 4.5 V, IDD ≤ 10 mA)
Thermal Resistance [2]
(Channel-to-Backside @ Tch = 160°C)
Channel Temperature[3] (TA = 125°C, MTTF > 106 hrs,
VDD = 4.5 V, IDD = 300 mA)
Units
V
mA
mA
V
V
°C/W
°C
Min.
2
-2
Typ.
4.5
55
24.5
-0.6
-1.2
62
160
Notes:
1. Backside ambient operating temperature TA = 25°C unless otherwise noted.
2. Thermal resistance (°C/Watt) at a channel temperature T (°C) can be estimated using the equation:
θ(T) ≅ 62 x [T(°C)+ 273] / [160°C + 273].
3. Derate MTTF by a factor of two for every 8°C above Tch.
Max.
5
-0.8
HMMC-5040 RF Specifications, TA = 25°C, VDD = 4.5 V, IDD = 300 mA, Z o = 50 Ω
Symbol Parameters/Conditions
Broadband
Specifications
Narrow Band
Performance
Units Min. Typ. Max.
Typical
BW
Operating Bandwidth
GHz 21 20–44 40 21–24 27–29 37–40
S21
Small Signal Gain
dB
20
22
∆ S21
Small Signal Gain Flatness
dB
± 1.5
(RLin)MIN Minimum Input Return Loss
dB
8
10
(RLout)MIN Minimum Output Return Loss dB
8
10
S12
Reverse Isolation
dB
54
P-1dB
Output Power
dBm
18
(@ 1dB Gain Compression)
25
23
22
±1 ± 0.75 ± 0.3
9
10
14
10
11
12
54
54
54
18
18
18
Psat
Saturated Output Power
dBm 20
21
@ 3 dB Gain Compression
21
21
21
6-59
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