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K3302 データシートの表示(PDF) - Toshiba
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コンポーネント説明
メーカー
K3302
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
K3302 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3302
3
1
Duty
=
0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.05
0.02
0.03
0.01
0.01
0.005
0.003
0.001
100
μ
1m
r
th
−
t
w
Single pulse
10 m
100 m
Pulse width tw (s)
PDM
t
T
Duty
=
t/T
Rth
(ch-a)
=
96.1°C/W
1
10
100
Safe operating area
10
ID max (pulsed)
*
1
ID max (continuous)
100
μ
s
*
1 ms
*
0.1
DC operation Ta
=
25°C
0.01
*
Single nonrepetitive pulse
Ta
=
25°C
Curves must be derated linearly
with increase in temperature.
0.001
0.1
1
10
VDSS max
100
1000
Drain current I
D
(A)
E
AS
−
T
ch
20
16
12
8
4
0
25
50
75
100
125
150
Channel temperature Tch (°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
=
90 V, L
=
100 mH
Wave form
E
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2006-11-06
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