K3309 データシートの表示（PDF） - Toshiba
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K3309 Datasheet PDF : 6 Pages
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2SK3309
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate -source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 450 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
±10
μA
±30 ⎯
⎯
V
⎯
⎯
100
μA
450
⎯
⎯
V
550
3.0
⎯
5.0
V
⎯ 0.48 0.65 Ω
1.5 4.3
⎯
S
⎯ 920 ⎯
⎯
12
⎯
pF
⎯ 140 ⎯
tr
10 V
VGS
0V
ton
ID = 5 A
⎯
25
⎯
VOUT
⎯
35
⎯
RL = 40 Ω
ns
tf
⎯
10
⎯
Duty <= 1%, tw = 10 μs VDD ∼− 200 V
toff
⎯
60
⎯
Qg
Qgs
VDD ∼− 360 V, VGS = 10 V, ID = 10 A
Qgd
⎯
23
⎯
⎯
9
⎯
nC
⎯
14
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
10
A
⎯
⎯
40
A
⎯
⎯
−1.7
V
⎯
280
⎯
ns
⎯
2.7
⎯
μC
Marking
K3309
※
Type
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2
2006-11-06
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