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K3309 データシートの表示(PDF) - Toshiba
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K3309
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
K3309 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2.0
Common source
VGS
=
10 V
Pulse test
1.6
R
DS (ON)
– Tc
1.2
ID
=
10 A
0.8
5
2.5
0.4
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
2SK3309
100
Common source
Tc
=
25°C
Pulse test
10
I
DR
– V
DS
1
10
0.1
0.01
0
5
1
3
VGS
=
0,
−
1 V
−
0.2
−
0.4
−
0.6
−
0.8
−
1
−
1.2
Drain-source voltage V
DS
(V)
10000
Capacitance – V
DS
1000
Ciss
100
Coss
10
Common
source
VGS
=
0 V
f
=
1 MHz
1
0.1
1
Crss
10
100
Drain-source voltage V
DS
(V)
1000
V
th
– Tc
6
Common source
VDS
=
10 V
5
ID
=
1 mA
Pulse test
4
3
2
1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
– Tc
100
80
60
40
20
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
500
20
Common source
ID
=
10 A
Tc
=
25°C
400
16
Pulse test
VDD
=
90 V
VDS
300
12
180
360
200
8
VGS
100
4
0
0
0
10
20
30
40
50
Total gate charge Q
g
(nC)
4
2006-11-06
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