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2SK3310(2002) データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SK3310
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
2SK3310 Datasheet PDF : 0 Pages
2.0
Common source
VGS
=
10 V
Pulse test
1.6
R
DS (ON)
– Tc
1.2
ID
=
10 A
0.8
5
2.5
0.4
0
-
80
-
40
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – V
DS
3000
1000
Ciss
300
100
Coss
30
Common source
VGS
=
0 V
10
f
=
1 MHz
Tc
=
25°C
3
0.1
0.3 1
3
Crss
10
30
100 300
Drain-source voltage V
DS
(V)
2SK3310
100
Common source
Tc
=
25°C
Pulse test
10
I
DR
– V
DS
1
10
0.1
0.01
0
5
1
3
VGS
=
0,
-
1 V
-
0.2
-
0.4
-
0.6
-
0.8
-
1
-
1.2
Drain-source voltage V
DS
(V)
V
th
– Tc
6
Common source
VDS
=
10 V
5
ID
=
1 mA
Pulse test
4
3
2
1
0
-
80
-
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
– Tc
50
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
500
20
Common source
ID
=
10 A
400
Tc
=
25°C
16
VDD
=
90 V
Pulse test
VDS
300
12
180
360
200
8
VGS
100
4
0
0
0
10
20
30
40
50
Total gate charge Q
g
(nC)
4
2002-09-04
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