2SK3453 データシートの表示（PDF） - Toshiba
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2SK3453 Datasheet PDF : 6 Pages
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2SK3453
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 700 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
±10
μA
±30 ⎯
⎯
V
⎯
⎯
100
μA
700 ⎯
⎯
V
2.0
⎯
4.0
V
⎯ 0.72 1.0
Ω
4.0 7.0
⎯
S
⎯ 1700 ⎯
⎯
40
⎯
pF
⎯ 200 ⎯
tr
10 V
VGS
0V
ton
ID = 5 A VOUT
⎯
40
⎯
⎯
72
⎯
RL = 40 Ω
ns
tf
VDD ∼− 200 V
⎯
42
⎯
Duty ≤ 1%, tw = 10 μs
toff
⎯ 145 ⎯
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 10 A
Qgd
⎯
53
⎯
⎯
25
⎯
nC
⎯
28
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
10
A
⎯
⎯
30
A
⎯
⎯
−1.9
V
⎯ 1400 ⎯
ns
⎯ 17.5 ⎯
μC
Marking
TOSHIBA
K3453
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
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