2SK3652 データシートの表示（PDF） - TY Semiconductor

部品番号

コンポーネント説明

メーカー

2SK3652

N-channel Enhancement Mode MOSFET

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

2SK3652

Features

Low on-resistance, low Qg

High avalanche resistance

For high-speed switching

TO-263

+0.2

4.57 +0.1

-0.2

1.27-0.1

Unit: mm

1.27+0.1

-0.1

0.1max

+0.2

2.54-0.2

+0.1

5.08-0.1

0.81+0.1

-0.1

2.54

0.4+0.2

-0.2

1 Gate

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Drain-source surrender voltage

VDSS

230

V

Gate-source surrender voltage

VGSS

30

V

Drain current

ID

50

A

Peak drain current

IDP

200

A

Avalanche energy capability *

EAS

2 200

mJ

Power dissipation Ta = 25

Power dissipation

3

PD

W

100

Channel temperature

Tch

150

Storage temperature

Tstg

-55 to +150

* L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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