2SK3652 データシートの表示（PDF） - TY Semiconductor

部品番号

コンポーネント説明

メーカー

2SK3652

N-channel Enhancement Mode MOSFET

TY Semiconductor 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Gate-drain surrender voltage

Gate threshold voltage

Drain-source cutoff current

Gate-source cutoff currentt

Drain-source on resistance

Forward transfer admittance

Short-circuit forward transfer capacitance

Short-circuit output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Diode foward voltage

Reverse recovery time

Reverse recovery charge

Total gate charge

Gate-source charge

Gate-drain charge

Channel-case heat resistance

Channel-atmosphere heat resistance

TransistIoCrs

Product specification

2SK3652

Symbol

Testconditons

VDSS ID = 1 mA, VGS = 0

Vth VDS = 25 V, ID = 10 mA

IDSS VDS = 184 V, VGS = 0

IGSS VGS = 30 V, VDS = 0

RDS(on) VGS = 10 V, ID = 25 A

Yfs VDS = 25 V, ID = 25 A

Ciss

Coss VDS = 25 V, VGS = 0, f = 1 MHz

Crss

td(on)

tr

td(off)

VDD = 100 V, ID = 25 A,RL = 4 Ù,

VGS = 10 V

tf

VDSF IDR = 50 A, VGS = 0

trr L = 230 ìH, VDD = 100 V

Qrr IDR = 25 A, di/dt = 100 A/ìs

Qg

Qgs VDD = 100 V, ID = 25 A,VGS = 10 V

Qgd

Rth(ch-c)

Rth(ch-a)

Min Typ Max Unit

230

V

2

4

V

100 ìA

1 ìA

29 40 mÙ

17 35

S

5 950

pF

850

pF

80

pF

65

ns

140

ns

470

ns

145

ns

-1.5 V

235

ns

1 180

nC

105

nC

40

nC

14

nC

1.25 /W

41.6 /W

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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