2SK3760 データシートの表示（PDF） - Toshiba
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2SK3760 Datasheet PDF : 6 Pages
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2SK3760
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, V DS = 0 V
±10 µA
V (BR) GSS ID = ±10 µA, V GS = 0 V
±30
V
IDSS
VDS = 600 V, V GS = 0 V
100 µA
V (BR) DSS ID = 10 mA, VGS = 0 V
600
V
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
RDS (ON) VGS = 10 V, ID = 1.8 A
1.7 2.2
Ω
Yf s
VDS = 10 V, ID = 1.8 A
0.7 2.5
S
Ciss
Crss
Coss
VDS = 25 V, V GS = 0 V, f = 1 MHz
550
6
pF
60
tr
10 V
VGS
ID = 1.8 A VOUT
12
0V
ton
50 Ω
RL =
45
111 Ω
ns
tf
13
VDD ∼− 200 V
toff
Duty <= 1%, tw = 10 µs
80
Qg
16
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 3.5 A
10
nC
Qgd
6
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
ID R P
VDSF
trr
Qrr
Test Condition
IDR = 3.5 A, V GS = 0 V
IDR = 3.5 A, V GS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
3.5
A
14
A
−1.7 V
1400
ns
9
µC
Marking
※
K3760
※ Lot Number
TYPE
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2
2004-02-26
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