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2SK3760 データシートの表示(PDF) - Toshiba
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2SK3760
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)
Toshiba
2SK3760 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
2
COMMON SOURCE 15,10
Tc
=
25°C
8
PULSE TEST
1.6
5
5.5
6
4.8
1.2
4.6
0.8
4.4
0.4
4.2
VGS
=
4V
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE V
DS
(V)
2SK3760
I
D
– V
DS
5
15,10
6
8
5.5
4
COMMON SOURCE
Tc
=
25°C
3
PULSE TEST
5
2
1
4.5
VGS
=
4 V
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
4
COMMON SOURCE
VDS
=
10 V
3
PULSE TEST
2
Tc
= −
55°C
1
100
25
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE V
GS
(V)
V
DS
– V
GS
20
COMMON SOURCE
Tc
=
25
℃
16
PULSE TEST
12
8
ID
=
3.5 A
4
1.8
0
0
4
1
8
12
16
GATE-SOURCE VOLTAGE V
GS
(V)
Y
f s
– I
D
10
Tc
= −
55°C
25
100
1
0.1
0.1
COMMON SOURCE
VDS
=
20 V
PULSE TEST
1
10
DRAIN CURRENT
D
I (A)
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
VGS
=
10 V
、
15V
1
0.1
1
10
DRAIN CURRENT
D
I (A)
3
2004-02-26
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