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2SK3767 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
2SK3767 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
2
5.5
10
6
5.25
1.6
1.2
5
0.8
4.75
4.5
0.4
Common source
VGS
=
4V
Tc
=
25°C
Pulse test
0
0
4
8
12
16
20
24
Drain-source voltage V
DS
(V)
2SK3767
I
D
– V
DS
4
Common source
Tc
=
25°C
Pulse test
10
6
3
5.5
2
5.25
5
1
4.75
4.5
VGS
=
4V
0
0
4
8
12
16
20
24
Drain-source voltage V
DS
(V)
5
Common source
4
VDS
=
20 V
Pulse test
I
D
– V
GS
3
2
−
55
Tc=100
℃
1
25
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
V
DS
– V
GS
20
Common source
Tc
=
25
℃
16
Pulse test
12
8
ID
=
2A
4
1
0.5
0
0
4
8
12
16
20
Gate
-
source voltage V
GS
(V)
⎪
Y
fs
⎪
– I
D
10
1
0.1
0.01
0.01
Tc
= −
55°C
100
25
Common source
VDS
=
20 V
Pulse test
0.1
1
10
Drain current I
D
(A)
R
DS (ON)
– I
D
100
Common source
Tc
=
25°C
Pulse test
10
VGS=10V
1
0.01
0.1
1
10
Drain current I
D
(A)
3
2009-09-29
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