2SK3690-01 データシートの表示（PDF） - SANYO -> Panasonic
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2SK3690-01 Datasheet PDF : 4 Pages
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2SK3690-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
103
Ciss
102
Coss
101
Typical Gate Charge Characteristics
VGS=f(Qg):ID=4.5A,Tch=25°C
14
12
Vcc= 120V
300V
10
480V
8
6
4
2
0
0
5
10
15
20
25
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10
1
100
100
101
VDS [V]
Crss
102
103
0.1
0.0
0.5
1.0
1.5
2.0
VSD [V]
Typical Switching Characteristics vs. ID
103 t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
tf
td(off)
102
td(on)
101
tr
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=4.5A
300
I =1.8A
AS
250
200
I =2.7A
AS
150
I =4.5A
AS
100
50
100
10-1
100
ID [A]
0
101
0
25
50
75
100
125
150
starting Tch [°C]
3
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