1550 データシートの表示（PDF） - STMicroelectronics

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1550

Low voltage high performance NPN power transistors

STMicroelectronics 

2STF1550 - 2STN1550

2

Electrical characteristics

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 50 V

0.1 μA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 4 V

0.1 μA

Collector-base

V(BR)CBO breakdown voltage

IC = 100 μA

50

V

(IE = 0)

Collector-emitter

V(BR)CEO (1) breakdown voltage

IC = 10 mA

50

V

(IB = 0)

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 100 μA

5

V

hFE (1) DC current gain

IC = 0.5 A

IC = 2 A

IC = 3 A

IC = 5 A

VCE = 2 V

VCE = 2 V

VCE = 2 V

VCE = 5 V

250

135

400

100

95

VCE(sat) (1)

Collector-emitter

saturation voltage

IC = 3 A

IB = 300 mA

0.26 0.45 V

VBE(sat) (1)

Base-emitter saturation

voltage

IC = 3 A

IB = 300 mA

1 1.2 V

CCBO

Collector-base

capacitance (IE = 0)

VCB = 10 V, f = 1 MHz

20

pF

Resistive load

ton

Turn-on time

toff

Turn-off time

IC = 1.5 A

VCC = 10 V

90

ns

IB1 = -IB2 = 150 mA

700

ns

1. Pulsed duration = 300 μs, duty cycle ≤1.5%

3/8

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