ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PIN (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE)
Low-Level Bus Voltage (Dominant State)
TXD LOW, VLIN = 40 mA
High-Level Voltage (Recessive State)
TXD HIGH, IOUT = 1.0 µA
Internal Pullup Resistor to VSUP (4)
- 40°C ≤ TA ≤ 70°C
70°C < TA ≤ 125°C
Current Limitation
TXD LOW, VLIN = VSUP
Leakage Current to GND
Recessive State, VSUP - 0.3 V ≤ VLIN ≤ VSUP (4)
VSUP Disconnected, -18 V ≤ VLIN ≤ 18 V (Excluding Internal Pullup
Source)
VSUP Disconnected, VLIN = -18 V (Including Internal Pullup Source)
VSUP Disconnected, VLIN = +18 V (Including Internal Pullup Source)
LIN Receiver, Low-Level Input Voltage
TXD HIGH, RXD LOW
LIN Receiver, High-Level Input Voltage
TXD HIGH, RXD HIGH
LIN Receiver Threshold Center
(VLINH - VLINL) / 2
LIN Receiver Input Voltage Hysteresis
VLINH - VLINL
LIN Wake-Up Threshold Voltage
INH OUTPUT PIN
VDOM
VREC
RPU
I LIM
I LEAK
0.0
—
0.85 VSUP
—
20
30
35
49
50
150
0.0
—
- 40
—
V
1.4
V
—
kΩ
47
60
mA
200
µA
10
40
—
- 600
—
—
15
—
V LINL
V LINH
V LINTH
0 VSUP
V
—
0.4 VSUP
0.6 VSUP
—
V
VSUP
V
—
VSUP/2
—
V LINHYS
V
0.05 VSUP
—
0.15 VSUP
V LINWU
3.5
4.5
6.0
V
High-Level Voltage (Normal Mode)
Leakage Current (Sleep Mode)
0 < VINH < VSUP
VWUH
VSUP - 0.8
—
I LEAK
0
—
VSUP
V
µA
5.0
WAKE INPUT PIN
Typical Wake-Up Threshold (EN = 0 V, 7.0 V ≤ VSUP ≤ 18 V) (5)
HIGH-to-LOW Transition
LOW-to-HIGH Transition
Wake-Up Threshold Hysteresis
WAKE Input Current
VWAKE ≤ 14 V
VWAKE > 14 V
VWUTH
VWUHYS
I WU
V
0.3 VSUP 0.43 VSUP 0.55 VSUP
0.4 VSUP 0.55 VSUP 0.65 VSUP
0.1 VSUP 0.16 VSUP 0.2 VSUP
V
µA
—
1.0
5.0
—
—
100
Notes
4. A diode structure is inserted with the pullup resistor to avoid parasitic current path from LIN to VSUP.
5. When VSUP is greater than 18 V, the wake-up voltage thresholds remain identical to the wake-up thresholds at 18 V.
33399
Analog Integrated Circuit Device Data
6
Freescale Semiconductor