SST29EE010-200-4I-NN データシートの表示（PDF） - Silicon Storage Technology
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SST29EE010-200-4I-NN Datasheet PDF : 30 Pages
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1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
TABLE 5: DC OPERATING CHARACTERISTICS VDD = 4.5-5.5V FOR SST29EE010
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
Power Supply Current
Read
Program and Erase
ISB1
Standby VDD Current
(TTL input)
Address input=VILT/VIHT, at f=1/TRC Min,
VDD=VDD Max
30 mA CE#=OE#=VIL, WE#=VIH, all I/Os open
50 mA CE#=WE#=VIL, OE#=VIH, VDD=VDD Max
3
mA CE#=OE#=WE#=VIH, VDD=VDD Max
ISB2
Standby VDD Current
(CMOS input)
50
µA CE#=OE#=WE#=VDD -0.3V, VDD=VDD Max
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
1
µA VIN =GND to VDD, VDD=VDD Max
10
µA VOUT =GND to VDD, VDD=VDD Max
0.8
V VDD=VDD Min
2.0
V VDD=VDD Max
0.4
V IOL=2.1 mA, VDD=VDD Min
2.4
V IOH=-400 µA, VDD=VDD Min
T5.4 1061
TABLE 6: DC OPERATING CHARACTERISTICS VDD = 2.7-3.0V FOR SST29VE010
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
Power Supply Current
Read
Program and Erase
ISB1
Standby VDD Current
(TTL input)
Address input=VILT/VIHT, at f=1/TRC Min,
VDD=VDD Max
12 mA CE#=OE#=VIL, WE#=VIH, all I/Os open
15 mA CE#=WE#=VIL, OE#=VIH, VDD=VDD Max
1
mA CE#=OE#=WE#=VIH, VDD=VDD Max
ISB2
Standby VDD Current
(CMOS input)
15
µA CE#=OE#=WE#=VDD -0.3V, VDD=VDD Max
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
1
µA VIN=GND to VDD, VDD=VDD Max
10
µA VOUT=GND to VDD, VDD=VDD Max
0.8
V VDD=VDD Min
2.0
V VDD=VDD Max
0.4
V IOL=100 µA, VDD=VDD Min
2.4
V IOH=-100 µA, VDD=VDD Min
T6.5 1061
©2005 Silicon Storage Technology, Inc.
9
S71061-11-000
9/05
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