M29F100BB(1999) データシートの表示（PDF） - STMicroelectronics

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M29F100BB
(Rev.:1999)

1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory

STMicroelectronics 

M29F100BT, M29F100BB

Table 6. Program, Erase Times and Program, Erase Endurance Cycles

(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)

Parameter

Min

Typ (1)

Typical after

100k W/E Cycles (1)

Chip Erase (All bits in the memory set to ‘0’)

0.6

0.6

Chip Erase

1.3

1.3

Block Erase (64 Kbytes)

0.6

0.6

Program (Byte or Word)

8

8

Chip Program (Byte by Byte)

1.2

1.2

Chip Program (Word by Word)

0.6

0.6

Program/Erase Cycles (per Block)

100,000

Note: 1. TA = 25°C, VCC = 5V.

Max

t.b.d.

Unit

sec

sec

sec

µs

sec

sec

cycles

Program Command. The Program command

can be used to program a value to one address in

the memory array at a time. The command re-

quires four Bus Write operations, the final write op-

eration latches the address and data in the internal

state machine and starts the Program/Erase Con-

troller.

If the address falls in a protected block then the

Program command is ignored, the data remains

unchanged. The Status Register is never read and

no error condition is given.

During the program operation the memory will ig-

nore all commands. It is not possible to issue any

command to abort or pause the operation. Typical

program times are given in Table 6. Bus Read op-

erations during the program operation will output

the Status Register on the Data Inputs/Outputs.

See the section on the Status Register for more

details.

After the program operation has completed the

memory will return to the Read mode, unless an

error has occurred. When an error occurs the

memory will continue to output the Status Regis-

ter. A Read/Reset command must be issued to re-

set the error condition and return to Read mode.

Note that the Program command cannot change a

bit set at ’0’ back to ’1’ and attempting to do so will

cause an error. One of the Erase Commands must

be used to set all the bits in a block or in the whole

memory from ’0’ to ’1’.

Unlock Bypass Command. The Unlock Bypass

command is used in conjunction with the Unlock

Bypass Program command to program the memo-

ry. When the access time to the device is long (as

with some EPROM programmers) considerable

time saving can be made by using these com-

mands. Three Bus Write operations are required

to issue the Unlock Bypass command.

Once the Unlock Bypass command has been is-

sued the memory will only accept the Unlock By-

pass Program command and the Unlock Bypass

Reset command. The memory can be read as if in

Read mode.

Unlock Bypass Program Command. The Un-

lock Bypass Program command can be used to

program one address in memory at a time. The

command requires two Bus Write operations, the

final write operation latches the address and data

in the internal state machine and starts the Pro-

gram/Erase Controller.

The Program operation using the Unlock Bypass

Program command behaves identically to the Pro-

gram operation using the Program command. A

protected block cannot be programmed; the oper-

ation cannot be aborted and the Status Register is

read. Errors must be reset using the Read/Reset

command, which leaves the device in Unlock By-

pass Mode. See the Program command for details

on the behavior.

Unlock Bypass Reset Command. The Unlock

Bypass Reset command can be used to return to

Read/Reset mode from Unlock Bypass Mode.

Two Bus Write operations are required to issue the

Unlock Bypass Reset command.

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