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FBR1001(1998) データシートの表示(PDF) - Electronics Industry

部品番号
コンポーネント説明
メーカー
FBR1001
(Rev.:1998)
EIC
Electronics Industry EIC
FBR1001 Datasheet PDF : 2 Pages
1 2
RATING AND CHARACTERISTIC CURVES ( FBR1000 - FBR1010 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+
50 Vdc
(approx)
D.U.T.
1
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
Trr
+ 0.5 A
0
- 0.25
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
10
8
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
250
Tc = 55 °C
200
6
4
2
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
150
100
50
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
Pulse Width = 300 µs
2% Duty Cycle
TJ = 25 °C
10
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01 0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)

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