40NDD データシートの表示（PDF） - Naina Semiconductor ltd.

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40NDD

Diode – Diode Module

Naina Semiconductor ltd. 

Naina Semiconductor Ltd.

Diode – Diode Module

Features

• Improved glass passivation for high reliability

• Exceptional stability at high temperatures

• High di/dt and dv/dt capabilities

• Low thermal resistance

40NDD

Maximum Ratings (TA = 250C unless otherwise noted)

Parameter

Symbol Values Units

Maximum average forward

current @ TJ = 850C

IF(AV)

40

A

Maximum average RMS

forward current

IF(RMS)

63

A

Maximum non-repetitive

surge current @ t = 10ms

IFSM

Maximum I2t for fusing @ t =

10ms

I2t

900

A

7.2

kA2s

M1 PACKAGE

Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)

Parameter

Symbol

Operating junction temperature range

TJ

Thermal resistance, junction to case

Rth(JC)

Values

-65 to +125

1.0

Units

0C

0C/W

Electrical Characteristics (TA = 25OC unless otherwise noted)

Parameter

Maximum average on-state current, 1800C sinusoidal

Maximum repetitive peak reverse voltage range

Forward voltage drop

RMS isolation voltage

Symbol

IT(max)

VRRM

VFM

VISO

Values

40

200 to 1600

1.25

2500

Units

A

V

V

V

1

D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653

sales@nainasemi.com • www.nainasemi.com

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