4126L データシートの表示（PDF） - Unisonic Technologies
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4126L Datasheet PDF : 4 Pages
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4126
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Tc = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
RATINGS
400
200
7
3
40
150
-40 ~ +150
UNIT
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Emitter Maintenance
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Fall Time
Storage Time
Feature Frequency
SYMBOL
TEST CONDITIONS
VCEO (SUS) IC=10mA, IB=0
V (BR) CBO
V (BR) EBO
ICBO
ICEO
IEBO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
tf
ts
fT
IC=1mA, IB=0
IE=1mA, IC=0
VCB=400V, IE=0
VCE=200V, IB=0
VEB=7V, Ic=0
VCE=10V, Ic=0.5A
VCE=5V, Ic=3A
IC=0.5A, IB=0.1A
IC=2A, IB=0.5A
IC=1A, IB=0.25A
IC=1A, IB1= -IB2 = 0.2A
IC=1A, IB1= -IB2 = 0.2A
VCE=10V, Ic=0.1A
MIN TYP
200
400
7
10
5
4
MAX
100
100
100
60
40
0.5
1.5
1.2
0.7
4
UNIT
V
V
V
µA
µA
µA
V
V
V
µs
µs
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R204-021,B
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